l2sc5658qm3t5g sot ?723 leshan radio company, ltd. 1/5 l2sc5658rm3t5g ordering information sot ? 723 marking diagram 1 2 3 xxm xx = specific device code ( q m = l2sc5658 q m3t5g rm = l2sc5658rm3t5g) m = date code collector 3 1 base 2 emitter npn silicon general purpose amplifier transistor this npn transistor is designed for general purpose amplifier applications. this device is housed in the sot-723 package which is designed for low power surface mount applications, where board space is at a premium. features ? reduces board space ? high h fe , 210 ? 460 (typical) ? low v ce(sat) , < 0.5 v ? esd performance: human body model; 2000 v, machine model; 200 v ? available in 8 mm, 7-inch/3000 unit tape and reel ? these are pb ? free devices maximum ratings (t a = 25 c) rating symbol value unit collector-base voltage v (br)cbo 50 vdc collector-emitter voltage v (br)ceo 50 vdc emitter-base voltage v (br)ebo 5.0 vdc collector current ? continuous i c 100 madc thermal characteristics rating symbol max unit power dissipation (note 1) p d 260 mw junction temperature t j 150 c storage temperature range t stg ? 55 ~ + 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a fr-4 glass e poxy printed circuit board using the minimum recommended footprint. 1 2 3 device package shipping ? 723 (pb ? free) 8000/tape & reel l2sc5658 q m3t5g sot
leshan radio company, ltd. 2/5 electrical characteristics (t a = 25 c) characteristic symbol min typ max unit collector-base breakdown voltage (i c = 50 adc, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 50 ? ? vdc emitter-base breakdown voltage (i e = 50 adc, i e = 0) v (br)ebo 5.0 ? ? vdc collector-base cutoff current (v cb = 30 vdc, i e = 0) i cbo ? ? 0.5 a emitter-base cutoff current (v eb = 4.0 vdc, i b = 0) i ebo ? ? 0.5 a collector-emitter saturation voltage (note 2) (i c = 50 madc, i b = 5.0 madc) v ce(sat) ? ? 0.4 vdc dc current gain (note 2) (v ce = 6.0 vdc, i c = 1.0 madc) l2sc5658 q m3t5g (v ce = 6.0 vdc, i c = 1.0 madc) l2sc5658rm3t5g h fe 120 180 ? ? 27 0 3 90 ? transition frequency (v ce = 12 vdc, i c = 2.0 madc, f = 30 mhz) f t ? 180 ? mhz output capacitance (v cb = 12 vdc, i c = 0 adc, f = 1.0 mhz) c ob ? 2.0 ? pf 2. pulse test: pulse width 300 s, d.c. 2%. l2sc5658qm3t5g,l2sc5658rm3t5g
leshan radio company, ltd. 3/5 typical electrical characteristics figure 1. i c ? v ce figure 2. collector emitter saturation voltage vs. collector current figure 3. base emitter saturation voltage vs. collector current figure 4. dc current gain vs. collector current 60 0 50 40 30 20 10 0 24 68 t a = 25 c 160 a 140 a 120 a 100 a 80 a 60 a 40 a i b = 20 a figure 5. saturation region figure 6. base ? emitter turn ? on voltage vs. collector current v ce , collector voltage (v) i c , collector current (ma) 0.01 0.1 1 10 100 1 0.1 0.01 v ce , collector ? emitter saturation voltage (v) i c , collector current (ma) t a = 150 c t a = 25 c t a = ? 55 c i c /i b = 10 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.01 0.1 1 10 100 i c , collector current (ma) v be(sat) , base ? emitter saturation voltage (v) t a = 150 c t a = 25 c t a = ? 55 c i c /i b = 10 i c , collector current (ma) h fe , dc current gain 1000 100 10 0.1 1 10 100 1000 t a = 150 c t a = 25 c t a = ? 55 c v ce = 6 v 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 i b , base current (ma) v ce(sat) , collector ? emitter saturation voltage (v) t a = 25 c 10 ma 30 ma 30 ma 50 ma i c = 100 ma 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 1000 i c , collector current (ma) v be(on) , base ? emitter on voltage (v) t a = ? 55 c t a = 25 c t a = 150 c v ce = 2 v l2sc5658qm3t5g,l2sc5658rm3t5g
leshan radio company, ltd. 4/5 typical electrical characteristics figure 7. capacitance 100 v r , reverse voltage (v) c, capacitance (pf) c ibo 10 1 c obo 0.1 1 10 100 0.1 1 10 100 1000 1000 100 10 ftau, current gain bandwidth product (mhz) figure 8. current gain bandwidth product vs. collector current i c , collector current (ma) v ce = ? 2 v t a = 25 c figure 9. safe operating area v ce , collector reverse voltage (v) i c , collector current (ma) 1 10 100 1000 100 10 1 10 ms 100 ms 10 s thermal limit l2sc5658qm3t5g,l2sc5658rm3t5g
sot?723 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 soldering footprint* dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ?y? ?x? x 0.08 (0.0032) y 2x e 1 2 3 style 1: pin 1. base 2. emitter 3. collector leshan radio company, ltd. 5/5 l2sc5658qm3t5g,l2sc5658rm3t5g
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